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www.irf.com 1 06/18/08 irfh7932pbf hexfet power mosfet notes through are on page 9 applications synchronous mosfet for notebook processor power synchronous rectifer mosfet for isolated dc-dc converters in networking systems benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current 100% tested for r g lead-free (qualified up to 260c reflow) rohs compliant (halogen free) low thermal resistance large source lead for more reliable soldering pqfn v dss r ds(on) max qg 30v 3.3m @v gs = 10v 34nc absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.2 r ja junction-to-ambient ??? 40 -55 to + 150 3.1 0.03 2 192 20 30 20 v max. 24 104 c/w c w a

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.5 3.3 ??? 3.3 3.9 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -5.9 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 59 ??? ??? s q g total gate charge ??? 34 51 q gs1 pre-vth gate-to-source charge ??? 7.9 ??? q gs2 post-vth gate-to-source charge ??? 3.6 ??? q gd gate-to-drain charge ??? 11 ??? q godr gate charge overdrive ??? 12 ??? see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) ??? 15 ??? q oss output charge ??? 19 ??? nc r g gate resistance ??? 0.7 ??? ? t d(on) turn-on delay time ??? 20 ??? t r rise time ??? 48 ??? t d(off) turn-off delay time ??? 23 ??? t f fall time ??? 20 ??? c iss input capacitance ??? 4270 ??? c oss output capacitance ??? 830 ??? c rss reverse transfer capacitance ??? 420 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 21 32 ns q rr reverse recovery charge ??? 33 50 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? i d = 20a v gs = 0v v ds = 15v 20 ? = 1.0mhz v gs = 4.5v, i d = 20a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c m ? v ds = 24v, v gs = 0v v ds = 15v t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/ s see fi g .16 t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 20v v gs = -20v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 20a see fig.15 max. 14 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 25a ??? ??? ??? ??? a 3.9 200 v ds = v gs , i d = 100a ns pf nc na a conditions

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 10v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080100 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 20a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.2 1.6 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a 25 50 75 100 125 150 t j , ambient temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 1.337662 0.000128 5.012987 0.023270 17.95455 1.0678 15.70617 38.4 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 3 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 25a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 30 35 40 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.86a 6.91a bottom 20.0a

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16. for n-channel hexfet power mosfets

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? !"# ?
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& fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

8 www.irf.com pqfn part marking pqfn package details marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

www.irf.com 9
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.071mh, r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%. rthjc is guaranteed by design when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/2008 pqfn tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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